| PART |
Description |
Maker |
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SC4630LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications
900V/100mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4634LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1500V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SA1967 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
| VHV12-2.0K1000P VHV12-2.0K1000N |
Ultra small size adjustable output type high voltage power supply 2W to 2.6W high voltage DC-DC converter
|
Volgen Kaga Electronics...
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
| 2SC2881 |
Voltage Amplifier Applications
High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 2SC3632-Z |
High voltage VCEO=600V High speed tf 0.5ìs Collector to base voltage VCBO 600 V
|
TY Semiconductor Co., Ltd
|
| 2SC3675 |
NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
|
SANYO
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
